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RB441Q40 Diodes RevC 1/3 Schottky barrier diode RB441Q40 zApplications Low current rectification zFeatures 1) Glass sealed envelope (MSD) 2) Low VF, Low IR 3) High reliability.

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R51V40 Diode * Z 6 ;. UDZS51B Diodes RevC 1/4 Zener diode UDZS51B zApplications zDimensions(Unit mm) zLand size figure (Unit mm) Constant voltage control zFeatures 1) Compact, 2pin minimold type for highdensity mounting (UMD2) 2) High reliability. O C 3 o < R51V40 h!ª1\ Ê5 y y!ª h $43 /å Ê 3 U o ^ < 2 J â ½ 9Ô9Õ UMD2 ÐVF 2 J 7 >5ì H â ½.

RB050L0 Diodes RevA 1/3 Schottky barrier diode RB050L0 zApplications General rectification zFeatures 1) Small power mold type (PMDT) 2) Low IR 3) High reliability z Structure Silicon epitaxial planer. & C D K y › î q w î ä T X } É a ƒ T = ‡ • ¹ y ¶ ³ w $ ` ‰ b \ ¹ 1 N ' 6 ð Q Ð ‹ = Á g¢ Á ‡ Î ä ® ³ B À & U 1. Q!!!!!z K S ( (Unit mm)!!!!!z Û å » K S (Unit mm).

UMZ16NFH Diodes 1/2 Zener diode UMZ16NFH zApplicationsw Voltage regulation (common anode configuration) zFeatures 1)Small mold type (UMD3) 2) High reliability. EMZ68E ² 6 » RevB 1/2 ÷ ý C } ² 6 » EMZ68E z ?. C C BøBøBöC Diode D * Z 6 ;.

\ f , 2 â ù Ô $ 43 h Ê » » é Ú ü 6 ;. Appendix Appendix1Rev11 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, officeautomation equipment, communications devices, electrical. O C 3 o < RB6G ø Y ?.

V Ù 2) 4 ø Y ² t 6 v Ó v ¸ 6 Æ å ¢ ;. PTZ51B Diodes RevF 2/4 zElectrical characteristics (Ta=25qC) zMarking (TYPE NO) TYPEAíNO TYPEAíNO «°§ Aí¥¦ PTZ 36B 36B PTZ B B PTZ B B PTZ 39B 39B PTZ 91B 91B PTZ 22B 22B PTZ 43B 43B PTZ 10B 10B PTZ 24B 24B PTZ 47B 47B PTZ 11B 11B PTZ 27B 27B PTZ 51B 51B PTZ 12B 12B PTZ 30B 30B PTZ 56B 56B PTZ 13B 13B PTZ 33B 33B PTZ 62B. PTZ10B Diodes RevE 2/4 zElectrical characteristics (Ta=25qC) MIN TYP MAX Iz(mA) Max Iz(mA) MAX VR(V) TYP Iz(mA) MIN Test Condition PTZ 36B 3600 3813 4000 40 15 40 60 10 28 40.